Using the .BIASCHK Statement

Breakdown will occur when the voltage bias between some terminals of an element is too large. The .BIASCHK statement monitors the voltage bias with user defined limits and noise. Bias monitoring can check the bias that you want to monitor during transient analysis and report the following:

The information will be saved as a warning and biaschk summary in the *.lis file.

This command is for MOS only in Star-Hspice release 2001.2. BIASCHK cannot detect the bias exceeding the limit if the bias is always the same value during transient analysis.

Syntax

.biaschk type terminal1=t1 terminal2=t2 limit=lim

+ <noise=ns><name=devname1><name=devname2>...

+ <mname=modelname1><mname=modelname2> ...

where:

type

Element type the user wants to check

MOS (R, C . . .)

Type is for MOS only in 2001.2

terminal 1, 2

Terminals the user wants to check between:

For MOS level 57: nd, ng, ns, ne, np, n6

For MOS level 58: nd, ngf, ns, ngb

For MOS level 59: nd, ng, ns, ne, np

For other MOS level: nd, ng, ns, nb

limit

Biaschk limit defined by user

noise

Biaschk noise defined by user

Default = 0.1v

name

Element name the user wants to check

mname

Model name. Elements of this model will be checked for bias

Example

.biaschk MOS terminal1=ng terminal2=nb limit=2v

+ noise=0.01v name=x1.x3.m1 mname=nch.1 name=m3

Star-Hspice Manual - Release 2001.2 - June 2001